Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: Copper-filled via is a critical component of advanced electronic packaging technologies. Embedded in interposer substrate, vias provide enhanced electrical performance in 2.5-D and 3-D ...
This repository offers the complete set of official resources, detailed guides, and comprehensive reference materials for MSI Wrapper Pro, tailored for Windows PCs. It supports developers and IT ...
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