Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...

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Abstract: This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power ...

The module delivers up to 400 W — 200 W per output — within a 2.5-inch footprint. The company says the addition allows engineers to configure as many as 16 isolated outputs from a single supply, ...

USP Chapter 797 outlines new compliance guidelines for Category 2 and Category 3 compounding, including more comprehensive documentation requirements, more frequent competency verification, and ...