Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Family vacations are thrilling as they bring in new places, stunning views, and memories that count. Nevertheless, every ...
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Abstract: A 3-D-printed lightweight miniaturized dual-band dual-polarized feed module of wireless backhaul systems consisting of a dual-band air-filled waveguide orthomode transducer (OMT) and a ...
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JEE Advanced 2026 Syllabus: The Indian Institute of Technology (IIT) Roorkee, the conducting authority for JEE Advanced 2026, has published the detailed, topic-wise syllabus on its official website at ...
The module delivers up to 400 W — 200 W per output — within a 2.5-inch footprint. The company says the addition allows engineers to configure as many as 16 isolated outputs from a single supply, ...
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