Tech Xplore

Practical design guidelines for atom-thin oxide transistors enable reliable 3D chip integration

Researchers at National Taiwan University have developed a unified model that explains how thickness, defects, interface ...
Semiconductor Engineering

GAA Transistors: 3D Atomic-Scale Metrology of Strain Relaxation and Roughness via Electron Ptychography (Cornell, ASM, TSMC)

“To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require ...
Nanowerk

Next-gen 3D transistors transform energy-efficient electronics

Researchers unveil 3D transistors using 2D semiconductors, enabling energy-efficient, high-performance electronics with unprecedented miniaturization. (Nanowerk News) In a significant advancement for ...
EDN

How Verilog-AMS accelerates transistor modeling

Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...
EDN

“PSP” transistor model wins Council vote

SAN FRANCISCO — The Compact Model Council (CMC) has selected the PSP model, jointly developed by Pennsylvania State University and Royal Philips Electronics, as the next generation industry standard ...