A technical paper titled “An energy-efficient 10T SRAM in-memory computing macro for artificial intelligence edge processor” was published by researchers at Atal Bihari Vajpayee-Indian Institute of ...
MoSys announced application-specific implementation of its 1T-SRAM(R) memory IP for the cellular phone marke designed specifically for mobile handset displays. New 1T-SRAM(R) Dual-Port Display Memory ...
A technical paper titled “Benchmarking and modeling of analog and digital SRAM in-memory computing architectures” was published by researchers at KU Leuven. “In-memory-computing is emerging as an ...
MoSys, Inc. announced today the availability of an application-specific implementation of its industry-leading 1T-SRAM(R) memory IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results